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Power Semiconductors(sic) - List of Manufacturers, Suppliers, Companies and Products

Last Updated: Aggregation Period:Sep 24, 2025~Oct 21, 2025
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Power Semiconductors Product List

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Sanan Semiconductor: SiC power semiconductor products

This is an introduction to a Chinese company that manufactures power semiconductors using SiC (silicon carbide) and GaN (gallium nitride).

Hunan Sanan Semiconductor Co., Ltd. is a power semiconductor manufacturing company based in Changsha, Hunan Province, China, specializing in SiC (silicon carbide) and GaN (gallium nitride). It is part of the Sanan Optoelectronics Group, a world-leading company in the development and manufacturing of LED chips, and focuses on power semiconductors for communications, automotive, and industrial applications, particularly in SiC (silicon carbide).

  • Other semiconductors

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SiC power semiconductor "SiC-SBD series"

Replace with silicone! Maintains high-speed switching even at high temperatures, reducing power loss!

The "SiC-SBD series" is a Schottky barrier diode made from SiC (silicon carbide) material. It supports low resistance and high-speed switching, which can reduce switching losses. Additionally, it can operate stably at high temperatures, enabling the miniaturization of power devices. It is effective in high-speed switching applications such as PFC circuits, motor drive circuits, and inverter circuits. 【Features】 ■ Reduction of switching losses due to high-speed switching characteristics ■ Improvement of power conversion efficiency and capability for high frequency ■ Reduction of leakage current at high temperatures ■ Prevention of thermal runaway due to increased current *For more details, please refer to the catalog. Feel free to contact us with any inquiries.

  • Weight related measuring instruments
  • Analytical Equipment and Devices
  • Other semiconductors

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[Seminar] Latest Trends and Future Outlook of the "Power Semiconductor" Market

Attracting Attention - Trends and Directions of SiC Power Semiconductors, Current Status of GaN and Gallium Oxide, etc.

Our company will hold a seminar titled "Latest Trends and Future Outlook of the Power Semiconductor Market." As major countries actively pursue initiatives to achieve carbon neutrality, the role of power semiconductors is becoming increasingly significant. Furthermore, there is a vigorous development and investment in SiC power semiconductors that can achieve higher efficiency than before, and substantial market growth is expected in the future. This seminar will provide a comprehensive overview of the power semiconductor market, trends and directions of SiC power semiconductors, as well as the current status of GaN and gallium oxide. [Seminar Details] ■ Date and Time: August 6 (Tuesday) 13:30 - 15:30 (Doors open at 13:00) ■ Venue: JPI Conference Square ■ Address: 5-2-32 Minamiazabu, Minato-ku, Tokyo, Kowa Hiroo Building ■ Participation Method: On-site, Live streaming ■ Speaker: Mr. Taku Mikami, Chief, First Section, Industrial Solutions Division, Fuji Keizai Co., Ltd. *For more details, please refer to the PDF document or feel free to contact us.

  • Technical Seminar

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SiC MOSFET Module FCA Series

"Techno Block" Series FCA300AD170

■Compact and highly reliable ■No external FWD required ■High short-circuit withstand capability ■Low on-resistance at high temperatures ■High noise resistance

  • Transistor

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[POTENS] Information on high voltage products over 600V, equivalent to MOSFETs, is abundant.

A wide lineup of general-purpose low-voltage to 1500V high-voltage MOSFETs! Cross-reference tables are available!

POTENS is a Taiwan-based fabless power semiconductor manufacturer established in 2012. We offer a wide range of high-quality products, including those with a proven track record in automotive applications. This time, we have created a cross-reference for products with high voltage ratings ranging from 600V to 1500V. Please feel free to download it and use it for new or alternative product considerations, EOL consultations, second source preparations, and delivery time measures. In addition to the products listed in the cross-reference, we also offer the following products: <10V to 100V rated MOSFETs> We have over 300 varieties, mainly focusing on CSP MOSFETs and Double Trench structure MOSFETs. <100V to 1000V rated products> We have over 500 varieties, including Double Trench structure MOSFETs, IGBTs, GaN, Super Junctions, and also SiC SBDs. <Products rated above 1000V> We have over 100 varieties, primarily focusing on SiC. *You can check the cross-reference from the "PDF Download" link below. *Please contact us if you would like to request samples.

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  • Transistor

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[Data] WTI Blog Power Supply and Power Electronics Edition 2017-2019

Full of our technical know-how, such as 'Power Equipment Lifespan Verification' and 'DC-DC Converter Design: Key Points in Power Design'!

This document summarizes the WTI blog from Wave Technology Co., Ltd., which is engaged in "development and design promotion business" to solve the shortage of engineers, covering the years 2017 to 2019, focusing on power supplies and power electronics. It includes topics such as "Differences between CMOS [low-voltage MOSFET] and power semiconductors," "Verification of the lifespan of power supply equipment," and "We tried to improve the efficiency of power supplies using SiC devices." Please take a moment to read it. [Contents (excerpt)] ■ 2017.5.16 Understanding principles and fundamentals is important for engineers! ■ 2017.9.5 The unsung hero of solar power generation systems – What is a power conditioner? ■ 2017.9.19 Differences between CMOS [low-voltage MOSFET] and power semiconductors ■ 2017.12.5 Development of devices supporting the electrification of automobiles ■ 2018.3.13 Pay attention to inductance that does not appear in circuit diagrams *For more details, please refer to the PDF document or feel free to contact us.

  • Other contract services
  • Embedded system design service
  • Circuit board design and manufacturing

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Latest Power Solution Product Lineup【Cystek】

Product introduction of power MOSFET products for power supply applications.

【BOOST MOS】 Application: Boost-type DC-DC converters, etc. Package: TO-252, TO-220FP Voltage Rating: 100V to 250V Features: Low R<sub>DS(ON)</sub>, high current capability, low Qg 【BUCK MOS】 Application: Buck-type DC-DC converters Package: TO-220FP Features: Ultra-low on-resistance (5.3mΩ and above) 【SR MOS (Synchronous Rectification MOSFET)】 Application: Efficiency improvement in rectification stages Features: High-speed switching, low Qg 【Power Saving MOS】 For ultra-low current applications (e.g., 0.033A class) Compact SOT-23 package 【Power Switch MOS】 Application: ON/OFF control for power lines Package: Various including DFN3x3, SOP-8 Features: Low on-resistance, high current control capability 【Signal Switch MOS】 For low current and low voltage switching applications Supports ultra-compact packages (such as SOT-23) 【GaN/SiC WBG Devices】 GaN HEMT and SiC SBD (Schottky Barrier Diode) High voltage products planned, such as 650V class

  • Transistor
  • diode
  • Other electronic parts

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[Seminar] Fuji Electric Co., Ltd.'s "Power Semiconductor" Business Strategy and Future Developments

Remarkable progress in the manufacturing of power semiconductors for electric vehicles.

We will hold a seminar titled "Fuji Electric's Power Semiconductor Business Strategy and Future Developments." In the global trend towards carbon neutrality, renewable energy, energy conservation, electrification, and electrification, Fuji Electric has been focusing on and expanding its power semiconductors for electric vehicles and renewable energy/energy conservation in recent years. In the power semiconductor market, where strong competitors from Europe, the United States, and Japan are vying for position, and Chinese manufacturers are also gaining influence, we will provide a detailed explanation of Fuji Electric's business strategy for power semiconductors, particularly those for electric vehicles, including market trends and technological trends for the current mainstay power semiconductor, IGBT, and the SiC MOSFET, which is expected to grow in the future. 【Seminar Details】 ■ Date and Time: November 25, 2024 (Monday) 13:30 - 15:30 (Doors open at 13:00) ■ Venue: JPI Conference Square ■ Address: 5-2-32 Minami Azabu, Minato-ku, Tokyo, Kowa Hiroo Building ■ Participation Method: In-person, live streaming, archived streaming ■ Speaker: Fuji Electric Co., Ltd.     Semiconductor Business Division Fellow (Ph.D. in Engineering)     Mr. Tatsuhiko Fujihira *For more details, please refer to the PDF document or feel free to contact us.

  • Technical Seminar

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